GLOBALFOUNDRIES FINFET PDF

Terms of use. GlobalFoundries has had a rough few years. Now, GlobalFoundries is taking another shot at building out its own custom process technology, with an announcement that it intends to skip the 10nm node entirely and bring its own 7nm product to market. Even more interesting is the fact that the company intends to execute a full node shrink at 7nm, rather than using a hybrid node. FEOL covers wafer production, lithography, etch, and deposition.

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Terms of use. GlobalFoundries has had a rough few years. Now, GlobalFoundries is taking another shot at building out its own custom process technology, with an announcement that it intends to skip the 10nm node entirely and bring its own 7nm product to market. Even more interesting is the fact that the company intends to execute a full node shrink at 7nm, rather than using a hybrid node. FEOL covers wafer production, lithography, etch, and deposition.

Broadly speaking, FEOL refers to the process of manufacturing transistors. For more information on FinFETs, see this article. Once the individual components of a chip have been created, they have to be connected together. BEOL refers to this process. The metal layers, insulating layers, vias, and bond sites are all added during this phase. When we say that TSMC and Samsung are using a hybrid node, it means they are combining a new transistor architecture or smaller transistors with an already-established set of design rules for how those transistors are connected together.

To-date, only Intel has stuck to the goal of executing full-node shrinks at every new technology introduction. GlobalFoundries wants to copy this process at the 7nm node, and will be skipping 10nm in favor of doing so. No other foundry can match this legacy of manufacturing high-performance chips. If 10nm is indeed short-lived, it makes sense for GF to start working on a 7nm full node shrink now. The company has also announced that it will build a 12nm fully-depleted SOI node, though this is apparently for memory and embedded customers.

If GF can pull the node off, it would increase competition at cutting-edge nodes and take semiconductor manufacturing from a two-way race into a three-way competition. Tagged In.

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The features are designed to deliver better scalability and performance for applications in high-growth markets such as hyperscale datacenters and autonomous vehicles. The new platform features will improve power, performance and scalability by delivering transistor enhancements optimized for ultra-high performance and enhanced RF connectivity, as well as new high-speed, high-density memories for emerging enterprise and cloud security needs. Bami Bastani , senior vice president of business units at GF. The feature-rich enhancements being added to the platform include: Ultra-high density: Delivers increased transistor density through continued improvements to the 12LP design library 7.

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